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參數(shù)資料
| 型號： | RFP15N15 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 36K |
| 代理商： | RFP15N15 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
16
14
12
10
8
6
4
2
0
1
10
1000
100
V
DS
, DRAIN TO SOURCE (V)
0.1
1
10
100
I
D
,
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
C
= 25
o
C
CURVE MUST BE DERATED LINEARLY WITH INCREASE
IN TEMPERATURE
30
20
10
0
0
1
2
3
4
5
6
7
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DUTY CYCLE
≤
2%
T
C
= 25
C
V
GS
= 20V
7V
6V
5V
4V
8V
3.6V
10V
PULSE DURATION = 80
μ
s
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
35
30
25
20
15
10
5
0
I
D
,
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= -40
o
C
T
C
= 25
o
C
0
5
10
15
20
25
30
35
I
D
, DRAIN CURRENT (A)
0.30
0.25
0.20
0.15
0.10
0.05
0
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
CASE TEMPERATURE
RFP15N15
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