參數(shù)資料
型號： RFP150N
廠商： Intersil Corporation
英文描述： 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
中文描述： 第44A，100V的，0.030 Ohm的N通道功率MOSFET
文件頁數(shù)： 7/10頁
文件大?。?/td> 127K
代理商： RFP150N
7
PSPICE Electrical Model
.SUBCKT IRFP150N 2 1 3 ;
rev 15 Jan 2000
CA 12 8 2.70e-9
CB 15 14 2.70e-9
CIN 6 8 1.56e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 113.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 6.5e-9
LSOURCE 3 7 2.3e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.68e-2
RGATE 9 20 0.86
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.65e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*98),3.5))}
.MODEL DBODYMOD D (IS = 1.30e-12 IKF = 19 RS = 2.86e-3 XTI = 5 TRS1 = 2.25e-3 TRS2 = 1.00e-6 CJO = 1.90e-9 TT = 6.5e-8 M = 0.55)
.MODEL DBREAKMOD D (RS = 3.05e-1 IKF = 1 TRS1 = 8e-4 TRS2 = 3e-6)
.MODEL DPLCAPMOD D (CJO = 2.20e-9 IS = 1e-30 M = 0.83)
.MODEL MMEDMOD NMOS (VTO = 3.21 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.86)
.MODEL MSTROMOD NMOS (VTO = 3.58 KP = 37.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.81 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.60 )
.MODEL RBREAKMOD RES (TC1 =1.08e-3 TC2 = -8.6e-7)
.MODEL RDRAINMOD RES (TC1 = 7.70e-3 TC2 = 2.20e-5)
.MODEL RSLCMOD RES (TC1 = 4.25e-3 TC2 = 1.00e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.07e-3 TC2 = -6.65e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.20e-3 TC2 =9.67e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2.4)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.4 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.8 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.8)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
IRFP150N
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