參數(shù)資料
型號： RFP14N05L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： GLARE SCREEN PLUS FOR CURVED M
中文描述： 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 119K
代理商： RFP14N05L
2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD14N05L, RFD14N05LSM,
RFP14N05L
50
50
±
10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
DSS
DGR
GS
D
DM
AS
D
o
W
o
o
C
W/
C
J,
T
STG
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
V
= 250
μ
A, V
GS
= 250
= 0V, Figure 13
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
I
DSS
GS
= V
DS
, I
D
μ
A, Figure12
1
-
2
V
Zero Gate Voltage Drain Current
V
DS
= 40V, V
GS
= 0V
-
-
1
μ
μ
A
V
DS
= 40V, V
GS
= 0V, T
C
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
= 14A, V
=
±
10V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
R
θ
R
θ
I
D
V
R
R
GS
= 5V, Figures 9, 11
-
-
0.100
Turn-On Time
DD
L
= 3.57
GS
= 0.6
= 25V, I
D
= 7A,
GS
= 5V,
, V
-
-
60
ns
Turn-On Delay Time
-
13
-
ns
Rise Time
-
24
-
ns
Turn-Off Delay Time
-
42
-
ns
Fall Time
-
16
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0V to 10V
V
R
Figures 20, 21
DD
L
= 2.86
= 40V, I
D
= 14A,
-
-
40
nC
Gate Charge at 5V
V
GS
= 0V to 5V
-
-
25
nC
Threshold Gate Charge
V
GS
= 0V to 1V
-
-
1.5
nC
Input Capacitance
V
Figure 14
DS
= 25V, V
GS
= 0V, f = 1MHz
-
670
-
pF
Output Capacitance
-
185
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Thermal Resistance Junction to Case
JC
-
-
3.125
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
JA
TO-251 and TO-252
-
-
100
JA
TO-220
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 14A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
≤
300ms, Duty Cycle
≤
2%.
RFD14N05L, RFD14N05LSM, RFP14N05L
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