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參數(shù)資料
| 型號(hào)： | RFP12N10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | RFP12N10 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
14
12
10
8
6
4
2
0
RFP12N08, RFP12N10
RFM12N08, RFM12N10
T
C
= 25
o
C
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0
I
D
,
I
D
(MAX)
CONTINUOUS
DCOPERATON
V
DSS
(MAX) 80V
RFM12N08, RFP12N08
V
DSS
(MAX) 100V
RFM12N10, RFP12N10
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
16
12
8
4
0
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 20V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
2
4
6
8
10
12
16
12
8
4
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
0.8
0
0.6
0.4
0.2
r
D
,
O
)
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
RFM12N08, RFM12N10, RFP12N08, RFP12N10
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| RFP12N1093 | 制造商:Harris Corporation 功能描述: |
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| RFP12N10LR4154 (6 AMPS) | 制造商:Intersil Corporation 功能描述: |
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