參數(shù)資料
型號(hào)： RFP12N08
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
中文描述： 12 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 43K
代理商： RFP12N08
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
2.0
1.5
1.0
0.5
0
N
O
I
D
= 12A
PULSE DURATION = 80
μ
s
V
GS
= 10V
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
1
0.8
0.6
1.2
1.4
N
T
V
GS
= V
DS
I
D
= 250
μ
A
0
10
20
V
DS
, DRAIN TO SOURCE (V)
30
40
50
60
70
1200
1000
800
600
400
200
0
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
V
DD
= BV
DSS
100
75
50
25
0
10
8
6
4
2
0
V
G
,
V
D
,
0.75 BV
DSS
0.25 BV
DSS
0.50 BV
DSS
DRAIN SOURCE VOLTAGE
GATE
SOURCE
VOLTAGE
V
DD
= BV
DSS
R
L
= 8.33
I
G(REF)
= 0.56mA
V
GS
= 10V
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
RFM12N08, RFM12N10, RFP12N08, RFP12N10
相關(guān)PDF資料
PDF描述
RFP12N10 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP12N08L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 12A I(D) | TO-220AB
RFP12N10 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP12N1093 制造商:Harris Corporation 功能描述:
RFP12N10L 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP12N10L 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
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