參數(shù)資料
型號： RFM6N45
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
中文描述： 6 A, 450 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 2/4頁
文件大?。?/td> 32K
代理商： RFM6N45
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM6N45
450
450
6
15
±
20
100
0.8
-55 to 150
RFP6N45
450
450
6
15
±
20
75
0.6
-55 to 150
RFP6N50
500
500
6
15
±
20
75
0.6
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (RGS = 20kW) (Note 1). . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM6N45, RFP6N45
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
450
-
-
V
RFP6N50
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
,
V
GS
= 0V, T
C
= 125
o
C
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance(Note 2 )
r
DS(ON)
I
D
= 6A, V
GS
= 10V, (Figures 6, 7)
-
-
1.250
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
= 6A, V
GS
= 10V
-
-
7.50
V
Turn-On Delay Time
t
d(ON)
I
D
= 3A, V
DD
= 250V, R
G
= 50
,
V
GS
= 10V, R
L
= 81
(Figures 10, 11, 12)
-
15
45
ns
Rise Time
t
r
-
40
80
ns
Turn-Off Delay Time
t
d(OFF)
-
190
300
ns
Fall Time
t
f
-
60
100
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V
f = 1MHz, (Figure 9)
-
-
1500
pF
Output Capacitance
C
OSS
-
-
250
pF
Reverse Transfer Capacitance
C
RSS
-
-
200
pF
Thermal Resistance Junction to Case
R
θ
JC
RFM6N45
-
-
1.25
o
C/W
RFP6N45, RFP6N50
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 3A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
800
-
ns
NOTES:
2. Pulsed test: Pulse width
≤
300
μ
s duty cycle
≤
2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM6N45, RFP6N45, RFP6N50
相關(guān)PDF資料
PDF描述
RFP6P08 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
RFP6P08 P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
RFP6P10 P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
RFP6P10 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
RFP8P05 8A, 50V, 0.300 Ohm,N-Channel PowerMOSFET(8A, 50V, 0.300 Ohm,N溝道增強型功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFM6N50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-3
RFM6P08 制造商:Harris Corporation 功能描述:
RFM6P10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFM70 制造商:HOPERF 制造商全稱:HOPERF 功能描述:Low Power High Performance 2.4 GHz GFSK Transceiver Module
RFM70-D 功能描述:MOD TRANSCEIVER 2.4GHZ DIP RoHS:是 類別:RF/IF 和 RFID >> RF 收發(fā)器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準包裝:30 系列:- 頻率:4.9GHz ~ 5.9GHz 數(shù)據(jù)傳輸率 - 最大:54Mbps 調(diào)制或協(xié)議:* 應(yīng)用:* 功率 - 輸出:-3dBm 靈敏度:- 電源電壓:2.7 V ~ 3.6 V 電流 - 接收:* 電流 - 傳輸:* 數(shù)據(jù)接口:PCB，表面貼裝 存儲容量:- 天線連接器:PCB，表面貼裝 工作溫度:-25°C ~ 85°C 封裝/外殼:68-TQFN 裸露焊盤 包裝:管件
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*