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參數(shù)資料
| 型號(hào)： | RFM3N45 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 450 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | RFM3N45 |
Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFM3N45, RFM3N50, RFP3N45, RFP3N50
3A, 450V and 500V 3 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17405.
Features
3A, 450V and 500V
r
DS(ON)
= 3
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM3N45
TO-204AA
RFM3N45
RFM3N50
TO-204AA
RFM3N50
RFP3N45
TO-220AB
RFP3N45
RFP3N50
TO-220AB
RFP3N50
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
October 1998
File Number
1384.2
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| RFP3N45 | 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs |
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