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參數(shù)資料
| 型號： | RFM18N10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | CAT6A PVC BLUE F/UTP BULK CABLE |
| 中文描述： | 18 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | RFM18N10 |
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
20
18
16
14
12
10
8
6
4
2
0
RFP18N08,
RFP18N10
RFM18N08,
RFM18N10
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
I
D
,
T
C
= 25
o
C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
DCOPERATON
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
T
J
= MAX RATED
0
1
2
3
4
5
6
7
35
30
25
20
15
10
5
0
V
DS
, DRAIN TO SOURCE (V)
I
D
,
V
G
= 8V
8
V
G
= 7V
V
G
= 6V
V
G
= 5V
V
G
= 4V
V
G
= 10V
V
G
= 20V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
C
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
4
1
5
6
7
8
9
10
40
35
30
25
20
15
10
5
0
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
o
C
I
D
,
125
o
C
125
o
C
-40
o
C
25
o
C
-40
o
C
0
10
20
30
35
5
15
25
I
D
, DRAIN CURRENT (A)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
C
V
GS
= 10V
125
o
C
25
o
C
-40
o
C
RFM18N08, RFM18N10, RFP18N08, RFP18N10
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