參數(shù)資料
型號(hào)： RFM18N08
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： CAT6A PLENUM, YELLOW, SPOBULK CABLE
中文描述： 18 A, 80 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 38K
代理商： RFM18N08
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM18N08
80
80
18
45
±
20
100
0.8
-55 to 150
RFM18N10
100
100
18
45
±
20
100
0.8
-55 to 150
RFP18N08
80
80
18
45
±
20
75
0.6
-55 to 150
RFP18N10
100
100
18
45
±
20
75
0.6
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM18N08, RFP18N08
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
80
-
-
V
RFM18N10, RFP18N10
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 18A, V
GS
= 10V, (Figures 6, 7)
-
-
0.100
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 18A, V
GS
= 10V
V
DD
= 50V, I
D
≈
9A, R
G
= 50
, V
GS
= 10V,
R
L
= 5.5
(Figures 10, 11, 12)
t
d(OFF)
-
-
1.8
V
Turn-On Delay Time
t
d(ON)
-
60
90
ns
Rise Time
t
r
-
300
450
ns
Turn-Off Delay Time
-
150
225
ns
Fall Time
t
f
-
150
225
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz,
(Figure 9)
-
-
1700
pF
Output Capacitance
C
OSS
-
-
750
pF
Reverse-Transfer Capacitance
C
RSS
-
-
300
pF
Thermal Resistance Junction to Case
R
θ
JC
RFM18N08, RFM18N10
-
-
1.25
o
C/W
RFP18N08, RFP18N10
-
-
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 9A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
150
-
ns
NOTES:
2. Pulse test: width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM18N08, RFM18N10, RFP18N08, RFP18N10
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