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參數(shù)資料
| 型號： | RFL1P10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | RFL1P10 |
6-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
P
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
10.0
1.0
0.10
0.011
10
100
1000
I
D
,
R
R
OPERATION IN THIS AREA
LIMITED BY R
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
3
2
1
0
-2
-3
-4
-5
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -6V
V
GS
= -5V
4
-1
V
GS
= -7V
V
GS
= -8V
V
GS
= -10V
V
GS
= -20V
V
GS
= -4V
PULSE DURATION = 80
μ
s
T
C
= 25
C
0
V
DS
= -10V
PULSE DURATION = 80
μ
s
I
D
D
2.5
1.5
0.5
0
-2
V
GS,
GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
2
1
-40
o
C
25
o
C
0
125
o
C
125
o
C
25
o
C
-40
o
C
V
GS
= -10V
PULSE DURATION = 80
μ
s
r
D
D
I
D,
DRAIN CURRENT (A)
4
3
2
1
0
0
1
2
3
4
5
R
)
RFL1P08, RFL1P10
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