參數(shù)資料
型號： RFL1P08
廠商： HARRIS SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
中文描述： 1000 mA, 80 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
文件頁數(shù)： 2/4頁
文件大小： 42K
代理商： RFL1P08
6-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFL1P08
-80
-80
1
5
±
20
8.33
0.0667
-55 to 150
RFL1P10
-100
-100
1
5
±
20
8.33
0.0667
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20K
)
(Note 1) . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
AUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
300
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
RFL1P08
-80
-
-
V
RFL1P10
-100
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS,
V
GS
= 0V
-
-
-1
μ
A
V
DS
= 0.8 x Rated BV
DSS,
V
GS
= 0,
T
C
= 125
o
C
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0
-
-
±
100
nA
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
= 1A, V
GS
= -10V
-
-
-3.65
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1A, V
GS
= -10V (Figures 6, 7)
-
-
3.65
Turn-On Delay Time
t
d(ON)
I
D
≈
1A, V
DD
= -50V
R
G
=
50
V
GS
= -10V
R
L
= 47
(Figures 10, 11, 12)
-
7
25
ns
Rise Time
t
r
-
15
45
ns
Turn-Off Delay Time
t
d(OFF)
-
14
45
ns
Fall Time
t
f
-
11
25
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= -25V
f = 1MHz
(Figure 9)
-
-
150
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse-Transfer Capacitance
C
RSS
-
-
30
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
15
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -1A
-
-
-1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= -1A, dI
SD
/dt = 50A/
μ
s
-
135
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by mazimum junction temperature.
RFL1P08, RFL1P10
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