參數(shù)資料
型號(hào): RFL1N12
廠(chǎng)商: HARRIS SEMICONDUCTOR
元件分類(lèi): 小信號(hào)晶體管
英文描述: 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs
中文描述: 1000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 43K
代理商: RFL1N12
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.5
1.0
0.5
V
GS
= 10V, I
D
= 1A
N
O
0
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
1.4
1.2
1.0
0.8
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
0
10
20
30
40
50
60
70
200
240
0
40
80
120
160
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
f = 1MHz
C
ISS
C
OSS
C
RSS
0
0.5
1.0
I
D
, DRAIN CURRENT (A)
1.5
2.0
2.5
3.0
0
200
400
600
800
g
f
,
V
DS
= 10V
80
μ
s PULSE TEST
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= -40
o
C
1000
1200
150
112.5
75
37.5
0
0
2
4
6
8
10
V
D
,
V
G
,
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
BV
DSS
V
DD
= V
DSS
V
DD
= V
DSS
GATE
TO
SOURCE
VOLTAGE
R
L
= 75
I
G(REF)
= 0.095mA
V
GS
= 10V
DRAIN TO SOURCE
VOLTAGE
0.75V
DSS
0.50V
DSS
0.25V
DSS
RFL1N12, RFL1N15
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFL1N12L 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
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RFL1N18L 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-39