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參數(shù)資料
| 型號： | RFL1N10 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs |
| 中文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | RFL1N10 |
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
50
100
150
200
0
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0.5
1.0
1.5
2.0
N
O
I
D
= 1A, V
GS
= 10V
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
100
150
200
50
1.4
1.2
1.0
0.8
0.6
N
T
V
GS
= V
DS
, I
D
= 250
μ
A
C
ISS
C
OSS
C
RSS
60
70
50
40
30
20
10
0
240
200
160
120
80
40
0
V
DS
, DRAIN TO SOURCE (V)
C
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
75
25
50
100
0
V
D
,
8
2
4
10
0
V
G
,
6
I
G
(REF)
I
G
(ACT)
20
I
G
(REF)
I
G
(ACT)
20
t, TIME
(μ
s)
GATE
SOURCE
VOLTAGE
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
DRAIN SOURCE VOLTAGE
R
L
= 50
I
G
(REF) = 0.095 mA
V
GS
= 10V
V
DD
= BV
DSS
V
DD
= BV
DSS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFL1N08, RFL1N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFL1N10L | 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFL1N12L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N15L | 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N12 | 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs |
| RFL1N15 | 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFL1N10L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET |
| RFL1N12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N12L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFL1N15 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFL1N15L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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