參數(shù)資料
型號(hào)： RFK25N18
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 25 A, 180 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁數(shù)： 2/5頁
文件大?。?/td> 42K
代理商： RFK25N18
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFK25N18
RFK25N20
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180
200
V
180
200
V
25
25
A
60
60
A
±
20
±
20
V
150
150
W
1.2
1.2
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 150
-55 to 150
260
260
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFK25N18
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
180
-
-
V
RFK25N20
200
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 25A, V
GS
= 10V (Figures 6, 7)
-
-
0.150
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 25A, V
GS
= 10V
I
D
≈
12.5A, V
DD
= 100V, R
G
= 50 , V
GS
= 10V
R
L
= 8 ,
(Figures 10, 11, 12)
-
-
3.75
V
Turn On Delay Time
t
d(ON)
-
40
80
ns
Rise Time
t
r
-
150
225
ns
Turn-Off Delay Time
t
d(OFF)
-
300
400
ns
Fall Time
t
f
-
120
200
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V
f = 1MHz
(Figure 9)
-
-
3500
pF
Output Capacitance
C
OSS
-
-
900
pF
Reverse Transfer Capacitance
C
RSS
-
-
400
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 12.5A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
300
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s Duty Cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFK25N18, RFK25N20
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