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參數(shù)資料
| 型號： | RFH25N20 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER MOS FIELD EFFECT TRANSISTORS |
| 中文描述： | 功率MOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | RFH25N20 |
6-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
N
3
2
1
0
-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
4
100
I
D
= 25A
V
GS
= -10V
O
N
0.6
0.4
0.2
0-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
0.8
100
I
D
= 250
μ
A
V
GS
= V
DS
1.6
1.4
1.2
1.0
1000
00
-20
-50
C
3000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4000
2000
-30
-40
-10
C
ISS
C
OSS
C
RSS
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
10
8
6
4
2
0
100
75
50
25
0
V
D
,
V
G
,
GATE
SOURCE
VOLTAGE
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 4
I
G(REF)
= 1.5mA
V
GS
= -10V
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFH25P08, RFH25P10, RFK25P08, RFK25P10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFH25P08 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFH25P10 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFH29ZA | 制造商:Panasonic Industrial Company 功能描述:BLOCK |
| RFH30N12 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFH30N15 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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