參數(shù)資料
型號： RFH12N40
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs
中文描述： 12 A, 400 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
文件頁數(shù)： 2/5頁
文件大?。?/td> 40K
代理商： RFH12N40
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFH12N35
RFH12N40
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350
400
V
350
400
V
12
12
A
24
24
A
±
20
±
20
V
150
150
W
1.2
1.2
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 150
-55 to 150
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFH12N35
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
350
-
-
V
RFH12N40
400
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS,
V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS,
V
GS
= 0V, T
C
= 125
o
C
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= 10V, (Figures 6, 7)
-
-
0.380
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 12A, V
GS
= 10V
I
D
≈
6A, V
DD
= 200V, R
G
= 50
,
V
GS
= 10V,
R
L
= 33
(Figures 10, 11, 12)
-
-
4.56
V
Turn-On Delay Time
t
d(ON)
-
30
50
ns
Rise Time
t
r
-
105
150
ns
Turn-Off Delay Time
t
d(OFF)
-
480
750
ns
Fall Time
t
f
-
140
200
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1MHz,
(Figure 9)
-
-
3000
pF
Output Capacitance
C
OSS
-
-
900
pF
Reverse-Transfer Capacitance
C
RSS
-
-
400
pF
Thermal Resistance Junction-to-Case
R
θ
JC
RFH12N35, RFH12N40
-
-
0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 6A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
-
950
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFH12N35, RFH12N40
相關(guān)PDF資料
PDF描述
RFH25P08 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
RFH25N18 POWER MOS FIELD EFFECT TRANSISTORS
RFH25N20 POWER MOS FIELD EFFECT TRANSISTORS
RFH25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
RFHCS362AF Code Hopping Encoder with UHF ASK/FSK Transmitter
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF-H142SD-1110(LF)(SN) 制造商:JST Manufacturing 功能描述:2.54mm 14 2 wb_[ Right Angle 35.56mm Solder 250VDC / 250VAC 2A 105 -55 Gold Over Nickel 11.08mm 6.2mm
RFH25N18 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOS FIELD EFFECT TRANSISTORS
RFH25N20 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOS FIELD EFFECT TRANSISTORS
RFH25P08 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
RFH25P10 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*