- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374587 > RFH12N35 (HARRIS SEMICONDUCTOR) 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | RFH12N35 |
| 廠(chǎng)商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 40K |
| 代理商： | RFH12N35 |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T
C
, CASE TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
14
12
10
8
6
4
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100
1
10
1
0.1
1000
10
100
T
C
= 25
o
C, T
J
= MAX RATED
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
I
D
(MAX)
CONTINUOUS
DC OPERATION
25
20
15
10
5
0
I
D
,
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
V
GS
= 20V
V
GS
= 8-10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
30
20
10
0
0
1
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
r
D
,
0
10
20
30
40
I
D
, DRAIN CURRENT (A)
O
)
RFH12N35, RFH12N40
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFH12N40 | 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs |
| RFH25P08 | -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
| RFH25N18 | POWER MOS FIELD EFFECT TRANSISTORS |
| RFH25N20 | POWER MOS FIELD EFFECT TRANSISTORS |
| RFH25P10 | -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFH12N40 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs |
| RF-H142SD-1110(LF)(SN) | 制造商:JST Manufacturing 功能描述:2.54mm 14 2 wb_[ Right Angle 35.56mm Solder 250VDC / 250VAC 2A 105 -55 Gold Over Nickel 11.08mm 6.2mm |
| RFH25N18 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:POWER MOS FIELD EFFECT TRANSISTORS |
| RFH25N20 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:POWER MOS FIELD EFFECT TRANSISTORS |
| RFH25P08 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。