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參數(shù)資料
| 型號(hào)： | RFH10N45 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | RFH10N45 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
12
11
10
9
8
7
6
5
4
3
2
1
0
100
10
1
0.11
10
100
1000
I
D
,
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
DC
V
DS(MAX)
= 450V
RFH10N45
V
DS(MAX)
= 500V
RFH10N50
I
D
MAX CONTINUOUS
T
J
= MAX RATED
20
12
8
0
8
10
12
14
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
24
6
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
V
GS
= 6V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V, 8V
V
GS
= 3.5V
V
GS
= 5V
4
2
16
4
V
GS
= 3V
I
D
D
16
4
0
1
2
3
4
5
V
GS,
GATE TO SOURCE VOLTAGE (V)
12
8
0
20
24
V
DS
= 25V
PULSE DURATION = 80
μ
s
-40
o
C
25
o
C
125
o
C
6
7
r
D
D
I
D,
DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0
0
4
8
12
24
28
R
)
V
GS
= 10V
PULSE DURATION = 80
μ
s
125
o
C
25
o
C
-40
o
C
0.4
0.2
16
20
RFH10N45, RFH10N50
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