參數(shù)資料
型號(hào)： RFG60P05E
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 60A, 50V, 0.030 Ohm,P-Channel PowerMOSFET(60A, 50V, 0.030 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 60 A, 50 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 94K
代理商： RFG60P05E
4-148
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG60P05E
-50
-50
±
20
60
UNITS
V
V
V
A
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) (Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
SD
MIL-STD-883, Category B(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Refer to Peak Current Curve
215
1.43
Refer to UIS Curve
2
W
W/
o
C
W/
o
C
kV
-55 to 175
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= -50V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= 60A, V
GS
= -10V (Figure 9)
V
DD
= -25V, I
D
= 30A, R
L
= 0.83
,
V
GS
= -10V, R
GS
= 2.5
(Figure 13)
-50
-
-
V
Gate Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
μ
A
-
-
-25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
F
t
(OFF)
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.030
Turn-On Time
-
-
125
ns
Turn-On Delay Time
-
20
-
ns
Rise Time
-
60
-
ns
Turn-Off Delay Time
-
65
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
125
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -10V
V
GS
= 0V to -2V
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 12)
V
DD
= -40V, I
D
= 60A,
R
L
= 0.67
I
g(REF)
= -4mA
-
-
450
nC
Gate Charge at 10V
-
-
225
nC
Threshold Gate Charge
-
-
15
nC
Input Capacitance
-
7200
-
pF
Output Capacitance
-
1700
-
pF
Reverse Transfer Capacitance
-
325
-
pF
Thermal Resistance, Junction to Case
-
-
0.70
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
-
-
30
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
t
RR
I
SD
= -60A
I
SD
= -60A, dI
SD
/dt = 100A/
μ
s
-
-
-1.75
V
Diode Reverse Recovery Time
-
-
200
ns
NOTE:
2. Pulse test: pulse width
≤
300
μ
s maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG60P05E
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