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參數(shù)資料
| 型號： | RFG50N05L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 50V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFETs(50A, 50V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| 中文描述： | 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | RFG50N05L |
6-213
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N05L
RFP50N05L
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Above T
C
= 25
o
C, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
50
V
50
50
V
50
130
50
130
A
A
±
10
±
10
V
110
0.88
110
0.88
W
W/
o
C
Refer to UIS SOA Curve
-
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
-55 to 150
-55 to 150
o
C
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0, T
C
= 150
o
C
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V, V
DS
= 0V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 50A, V
GS
= 5V (Figure 7)
-
-
0.022
I
D
= 50A, V
GS
= 4V
-
-
0.027
Turn-On Time
t
(ON)
V
GS
= 5V, R
GS
= 2.5
, R
L
= 1
(Figures 12, 15, 16)
-
-
100
ns
Turn-On Delay Time
t
D(ON)
-
15
-
ns
Rise Time
t
r
-
50
-
ns
Turn-Off Delay Time
t
D(OFF)
-
50
-
ns
Fall Time
t
f
-
15
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to 10V
V
DD
= 40V, I
D
= 50A
R
L
= 0.8
(Figures 17, 18)
-
-
140
nC
Gate Charge at 5V
Q
G(5)
V
GS
= 0 to 5V
-
-
80
nC
Threshold Gate Charge
Q
G(th
)
V
GS
= 0 to 1V
-
-
6
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.14
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 50A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
ns
NOTES:
2. Pulsed: pulse duration = 300
μ
s maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RFG50N05L, RFP50N05L
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