參數(shù)資料
型號： RFG50N05
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs
中文描述： 50 A, 50 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/6頁
文件大小： 47K
代理商： RFG50N05
4-463
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N05, RFP50N05
50
50
50
120
±
20
132
0.88
Refer to UIS SOA Curve
-55 to 175
UNITS
V
V
A
A
V
W
W/
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
as
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 0.250
μ
A, V
GS
= 0V (Figure 9)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 0.250
μ
A (Figure 8)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
-
-
1
A
Zero Gate Voltage Drain Current,
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 50A, V
GS
= 10V (Figure 7)
V
DD
= 25V, I
D
≈
25A, R
L
= 1.0
,
R
GS
= 6.67
, V
GS
= 10V
(Figure 11)
-
-
0.022
Turn-On Time
t
(ON)
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
55
-
ns
Turn-Off Delay Time
t
d(OFF)
-
60
-
ns
Fall Time
t
f
-
15
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
g(tot)
V
GS
= 0-20V
V
DD
- 40V, I
D
= 50A
R
L
= 0.8
,
I
G(REF)
= 1.5mA
(Figure 11)
-
-
160
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0-10V
-
-
80
nC
Threshold Gate Charge
Q
g(th)
V
GS
= 0-2V
-
-
6
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.14
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220
-
-
62
o
C/W
TO-247
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 50A
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 50A, dl
SD
/dt = 100A/
μ
s
-
125
ns
NOTES:
2. Pulsed test: pulse width
≤
300
μ
s duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFG50N05, RFP50N05
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