參數(shù)資料
型號(hào): RFG40N10
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: CAP 100PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
中文描述: 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 51K
代理商: RFG40N10
4-452
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil application notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
16
8
0
25
50
75
100
125
150
24
40
32
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
100
10
1
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 100V
I
D
,
T
C
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
DC OPERATION
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
100
10
1
0.01
0.1
1
10
t
AV,
TIME IN AVALANCHE (ms)
I
A
A
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
0
t
AV
= (L/R) LN [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
100
80
60
40
20
0
0
2
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
,
V
G
0
V
GS
=7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
T
C
= 25
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
100
80
60
40
20
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
-55
o
C
25
o
C
175
o
C
RFG40N10, RFP40N10, RF1S40N10SM
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