參數(shù)資料
型號: RFD8P06LE
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
中文描述: 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù): 5/8頁
文件大?。?/td> 87K
代理商: RFD8P06LE
4-121
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE:
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Refer to Intersil Application Notes AN7254 and AN7260.
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
800
600
400
200
0
0
-5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-10
-15
-20
-25
C
1000
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-60
-45
-30
-15
0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1.2
I
G(REF)
= 1.45mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
V
GS
= -10V
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
DUT
t
P
-V
GS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
GS
R
L
DUT
-V
GS
0V
+
-
V
GS
V
DS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFD8P06E, RFD8P06ESM, RFP8P06E
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