參數(shù)資料
型號： RFD3055LESM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 82K
代理商： RFD3055LESM
4-436
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD3055, RFD3055SM, RFP3055
60
60
±
20
12
Refer to Peak Current Curve
Refer to UIS Curve
53
0.357
-55 to 175
UNITS
V
V
V
A
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Figures 14, 15) . . . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
T
C
= 125
o
C, V
DS
= 0.8 x Rated BV
DSS
V
GS
=
±
20V
I
D
= 12A, V
GS
= 10V (Figure 9) (Note 2)
V
DD
= 30V, I
D
= 12A
R
L
= 2.5
, V
GS
= +10V
R
G
= 10
(Figure 13)
60
-
-
V
Gate Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
-
-
100
nA
Drain to Source On Resistance
-
-
0.150
Turn-On Time
-
-
40
ns
Turn-On Delay Time
-
7
-
ns
Rise Time
-
21
-
ns
Turn-Off Delay Time
-
16
-
ns
Fall Time
-
10
-
ns
Turn-Off Time
-
-
40
ns
Total Gate Charge
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 48V,I
D
= 12A,
R
L
= 4
,
I
g(REF)
= 0.24mA
(Figure 13)
-
19
23
nC
Gate Charge at 10V
-
10
12
nC
Threshold Gate Charge
-
0.6
0.8
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 12)
-
300
-
pF
Output Capacitance
-
100
-
pF
Reverse Transfer Capacitance
-
30
-
pF
Thermal Resistance Junction to Case
-
-
2.8
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-251 and TO-252
-
-
100
TO-220
-
-
62.5
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Reverse Recovery Time
-
-
100
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD3055, RFD3055SM, RFP3055
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相關代理商/技術參數(shù)
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