參數(shù)資料
型號(hào): RFD16N06LESM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述: 16 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 342K
代理商: RFD16N06LESM
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 6. SATURATION CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
20
10
5
0
25
50
75
100
125
150
175
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
D
1
10
200
100
1ms
V
DSS
MAX = 60V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
10ms
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
I
D
,
500
100
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
(
)
175 - T
C
150
V
GS
= 10V
T
C
= 25
o
C
t
AV
, TIME IN AVALANCHE (ms)
0.01
0.1
1
10
I
A
,
1
10
100
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
20
40
60
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 5V
80
100
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
=25
o
C
RFD16N06LE, RFD16N06LESM
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