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參數(shù)資料
| 型號： | RFD16N06LESM9A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |
| 中文描述： | 16 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 342K |
| 代理商： | RFD16N06LESM9A |
4
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
3.0
4.5
6.0
7.5
1.5
0
20
40
60
D
,
-55
o
C
80
100
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
V
GS
= 5V, I
D
= 16A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
2000
1500
500
00
5
10
15
20
25
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
1000
C
ISS
C
OSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
60
45
30
15
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
5.00
3.75
2.50
1.25
0
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 3.75
I
G(REF)
= 0.65mA
V
GS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
RFD16N06LE, RFD16N06LESM
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