- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374586 > RFD16N05L (INTERSIL CORP) 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | RFD16N05L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | RFD16N05L |
6-166
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
4
7
1.4
1.1
1.0
0.7
0.9
0.8
0.6
6
0.5
I
D
= 16V
V
DS
= 15V
1.2
1.3
N
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
0
2.5
1.5
0.5
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.0
0
50
N
100
200
I
D
= 16A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
150
O
1.1
0.9
0.7
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
0.8
0.6
0
200
T
50
100
150
1.2
1.3
1.4
I
D
= 250
μ
A
V
GS
= V
DS
1.4
1.0
0.8
50
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.2
0
100
200
B
0
150
I
D
= 250
μ
A
0.6
0
10
15
20
25
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2000
1600
1200
0
5
800
400
C
ISS
C
RSS
C
OSS
V
GS
= 0V
f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
50
37.5
12.5
0
20
(
)
)
IG ACT
t, TIME (
μ
s)
80
(
)
)
IG ACT
10
8
6
2
0
V
D
,
V
G
,
DD
= BV
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
GATE
DEV
R
L
= 3.125
,
V
GS
= 5V
I
= 0.60mA
PLATEAU VOLTAGES IN
25
4
DRAIN SOURCE VOLTAGE
SOURCE
VOLTAGE
V
DD
= BV
DSS
V
DD
= BV
DSS
RFD16N05L, RFD16N05LSM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N06LE | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N05LSM | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N05LSM | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK |
| RFD16N05LSM_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD16N05LSM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N05LSM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。