參數(shù)資料
型號: RFD14N05LSM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: TV TO VGA/HDTV VIDEO SCALER
中文描述: 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 119K
代理商: RFD14N05LSM
2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.1
1
10
10
0.01
50
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
7.5
20
25
I
D
,
V
GS
= 4V
V
GS
= 10V
30
35
6.0
V
GS
= 3V
V
GS
= 2.5V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s, T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX.
0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
30
35
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
DD
= 15V
0
50
100
150
200
2.5
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
5.0
250
I
D
= 28A
I
D
= 7A
I
D
= 3.5A
I
D
= 14A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
)
0
20
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
40
60
80
100
120
140
160
t
d(OFF)
t
r
t
f
t
d(ON)
V
DD
= 25V, I
D
= 14A, R
L
= 3.57
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
V
GS
= 10V, I
D
= 14A
RFD14N05L, RFD14N05LSM, RFP14N05L
相關(guān)PDF資料
PDF描述
RFD15N06LE 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管)
RFD15N06LESM 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管)
RFD15P05SM 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管)
RFD15P05 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管)
RFD15P06SM 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD14N05LSM 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK
RFD14N05LSM 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 50V/14A/0.100 OHM N-CH LOGIC-LVL
RFD14N05LSM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05LSM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05LSM9A_S2515 制造商:Rochester Electronics LLC 功能描述:- Bulk