參數(shù)資料
型號(hào): RF3110
廠商: RF MICRO DEVICES INC
元件分類: 衰減器
英文描述: TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
中文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: MODULE-12
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 198K
代理商: RF3110
Preliminary
2-262
RF3110
Rev A0 010921
2
P
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
RAMP
)
Input RF Power
Duty Cycle at Max Power
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.5 to +6.0
-0.5 to +1.8
+11.5
37.5
8:1
-40 to +85
-55 to +150
Unit
V
DC
V
dBm
%
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall (GSM Mode)
Temp=+25°C, V
CC
=3.5V, V
RAMP
Max,
V
RAMP
=V
RAMP
Max, P
IN
=6dBm,
Freq=880MHz to 915MHz, 12.5% Duty
Cycle, Pulse Width=577
μ
s
Operating Frequency Range
Maximum Output Power
880 to 915
35.0
MHz
dBm
+34.5
Temp = 25°C, V
CC
=3.5V,
V
RAMP
=V
RAMP
Max
Temp=+85°C, V
CC
=2.9V,
V
RAMP
=V
RAMP
Max
At P
OUT
,
MAX
, V
CC
=3.5V
Full output power guaranteed at minimum
drive level
RBW=100kHz, 925MHz to 935MHz,
P
OUT
> +5dBm
RBW=100kHz, 935MHz to 960MHz,
P
OUT
> +5dBm
TX_ENABLE=0V, PIN=+8dBm
+32.0
dBm
Total Efficiency
Input Power Range
55
+6
%
+4
+8
dBm
Output Noise Power
-86
dBm
-88
dBm
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR
-35
-15
-30
-30
-5
-15
-36
dBm
dBm
dBm
dBm
50
2.5:1
P
OUT,MAX
-5dB<P
OUT
<P
OUT,MAX
Spurious<-36dBm, V
RAMP
=0.2V to 1.6V,
RBW=3MHz
Load impedance presented at RF OUT pad
8:1
Output Load Impedance
Power Control V
RAMP
Power Control “ON”
Power Control “OFF”
Power Control Range
V
RAMP
Input Capacitance
V
RAMP
Input Current
Turn On/Off Time
Note: V
RAMP
Max=3/8*VBATT+0.18<1.6V
50
1.6
0.25
V
V
dB
pF
μ
A
μ
S
Max. P
OUT
, Voltage supplied to the input
Min. P
OUT
, Voltage supplied to the input
V
RAMP
=0.2V to 1.6V
DC to 2MHz
V
RAMP
=1.6V
V
RAMP
=0 to 1.6V
0.2
35
15
10
4
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
相關(guān)PDF資料
PDF描述
RF3110PCBA TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
RF3117 3V 900MHZ LINEAR AMPLIFIER MODULE
RF3117PCBA 3V 900MHZ LINEAR AMPLIFIER MODULE
RF3118 3V 1900MHZ LINEAR AMPLIFIER MODULE
RF3118PCBA 3V 1900MHZ LINEAR AMPLIFIER MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF3110PCBA 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE
RF311-12 制造商:Teledyne Relays 功能描述:EM RLY SPDT 1A 12VDC 500OHM TH - Bulk 制造商:Teledyne Relays 功能描述:Electromechanical Relay SPDT 1A 12VDC 500Ohm Through Hole 制造商:Teledyne Relays 功能描述:RF RELAY
RF311-12/G 功能描述:高頻/射頻繼電器 12V SPDT RF TO-5 High Repeat RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz
RF311-26 制造商:Teledyne Relays 功能描述:RF RELAY
RF311-26/G 功能描述:高頻/射頻繼電器 26V SPDT RF TO-5 High Repeat RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:2 Form C (DPDT-BM) 觸點(diǎn)電流額定值: 線圈電壓:5 VDC 線圈類型:Non-Latching 頻率: 功耗:100 mW 端接類型:Solder Terminal 絕緣:20 dB to 30 dB at 1 GHz 介入損耗:0.2 dB at 1 GHz