參數(shù)資料
型號： RF3100-3K
廠商： RF MICRO DEVICES INC
元件分類： 衰減器
英文描述： 3V 1700MHZ LINEAR AMPLIFIER MODULE
中文描述： 1750 MHz - 1780 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝： 6 X 6 MM, LGM, 7 PIN
文件頁數(shù)： 2/6頁
文件大小： 116K
代理商： RF3100-3K
2-274
RF3100-3K
Rev A3 011017
2
P
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (P
OUT
≤
29dBm)
Control Voltage (V
REG
)
Mode Voltage (V
MODE
)
Input RF Power
Operating Case Temperature
Storage Temperature
Rating
+8.0
+5.2
+4.2
+3.5
+10
-30 to +110
-30 to +150
Unit
V
DC
V
DC
V
DC
V
DC
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
High Power State
(V
MODE
Low)
Typical Performance at V
CC
=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=1750MHz to 1780MHz
(unless otherwise specified)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency
Adjacent Channel Power
Rejection
1750
25.5
1780
MHz
dB
dBc
dBc
dBm
27.5
-49
-52
28
35
-46
%
dBc
P
OUT
=28dBm
ACPR@1.25MHz, P
OUT
=28dBm
-44.5
-60
<2:1
-57.5
dBc
ACPR@2.25MHz, P
OUT
=28dBm
Input VSWR
Output VSWR
10:1
6:1
No damage.
No oscillations. >-70dBc
At 90MHz offset.
Typical Performance at V
CC
=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=1750MHz to 1780MHz
(unless otherwise specified)
Noise Power
-141
dBm/Hz
Low Power State
(V
MODE
High)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Adjacent Channel Power
Rejection
1750
17
1780
MHz
dB
dBc
dBc
dBm
20
-49
-52
16
-52
-46.5
dBc
ACPR@1.25MHz
-66
<2:1
-61
dBc
ACPR@2.25MHz
Input VSWR
Output VSWR
10:1
6:1
No damage.
No oscillations. >-70dBc
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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