參數(shù)資料
型號(hào)： RF3100-2
廠商： RF MICRO DEVICES INC
元件分類： 衰減器
英文描述： 3V 900MHZ LINEAR AMPLIFIER MODULE
中文描述： 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
封裝： 6 X 6 MM, LGM, 7 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 118K
代理商： RF3100-2
2-270
RF3100-2
Rev A3 011017
2
P
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (P
OUT
≤
31dBm)
Control Voltage (V
REG
)
Input RF Power
Mode Voltage (V
MODE
)
Operating Case Temperature
Storage Temperature
Rating
+8.0
+5.2
+4.2
+10
+3.5
-30 to +110
-30 to +150
Unit
V
DC
V
DC
V
DC
dBm
V
DC
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
High Power State
(V
MODE
Low)
Typical Performance at V
CC
=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency
824
26
849
MHz
dB
dBc
dBc
dBm
29
-35
-40
28
35
%
V
CC
=3.2V, P
OUT
=28dBm
(room temperature)
ACPR@885kHz, P
OUT
=Max P
OUT
Adjacent Channel Power
Rejection
-48
-45
dBc
-57.0
-54.5
<2:1
10:1
6:1
dBc
ACPR@1980kHz, P
OUT
=Max P
OUT
Input VSWR
Output VSWR
No damage.
No oscillations. >-70dBc
At 45MHz offset.
Typical Performance at V
CC
=3.2V,
V
REG
=2.85V, T
AMB
=25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
Noise Power
-135
dBm/Hz
Low Power State
(V
MODE
High)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Adjacent Channel Power
Rejection
824
18
849
MHz
dB
dBc
dBc
dBm
21
-35
-40
16
-51
-46
dBc
ACPR@885kHz, P
OUT
=Max P
OUT
-62
-59
2.5:1
10:1
6:1
dBc
ACPR@1980kHz, P
OUT
=Max P
OUT
Input VSWR
Output VSWR
No damage.
No oscillations. >-70dBc
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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