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參數(shù)資料
| 型號： | RF2690 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | W-CDMA RECEIVE AGC AND DEMODULATOR |
| 中文描述： | TELECOM, CELLULAR, BASEBAND CIRCUIT, QCC20 |
| 封裝： | 4 X 4 MM, LCC-20 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 259K |
| 代理商： | RF2690 |
Preliminary
7-40
RF2690
Rev A4 010918
7
Q
D
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Down Voltage (V
PD
)
Input RF Power
Ambient Operating Temperature
Storage Temperature
Rating
-0.5 to +5
-0.5 to V
CC
+0.7
+3
-40 to +85
-40 to +150
Unit
V
DC
V
DC
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall Inputs and AGC
Temp=25°C, V
CC
=3V, Z
LOAD
=60k
diff.,
LO=760MHz@-10dBm, Z
SOURCE
=500
diff.
IF Frequency
W-CDMA IF Input Impedance
190
1200
2400
MHz
Single-ended
Balance. An external resistor across the dif-
ferential input is used to define the input
impedance.
LO Frequency
LO Input Level
LO Input Impedance
Maximum Voltage Gain
760
-10
50
81
MHz
dBm
dB
-20
0
Single-ended.
Pin-to-Pin voltage gain.
Note: 10dB additional voltage gain in input
match 50
to 500
.
76
Minimum Voltage Gain
Gain Variation versus V
CC
and
Temperature
Gain Control Voltage
5
-3
12
+1
15
+3
dB
0.3
2.4
V
Defined with external 10k
resistor in series
with V
GC1
pin. Analog gain control.
Blockers at 10MHz and 20MHz offset.
Maximum Gain. V
GC
=2.4V
Minimum Gain. V
GC
=0.3V
Maximum Gain. V
GC
=2.4V
Measured differentially.
Out of band blocker causing 1dB of inband
gain compression. Blocker at 5MHz.
Maximum Gain. V
GC
=2.4V
Minimum Gain. V
GC
=0.3V
Butterworth third order, F
C
2.5M+10%
Input IP3
-52
-48
-5
5
2.0
dBm
dBm
dB
V
P-P
0
Noise Figure
Inband Output 1dB Compression
Compression
1.5
-48
-17
dBm
dBm
Baseband 3dB Bandwidth
2.25
2.5
2.75
MHz
Calibrated. F
CLK
=13MHz
A measure of IQ gain match and IQ quadra-
ture accuracy. Measured for baseband fre-
quencies 100kHz to 2.5MHz.
Sideband Suppression
27
dB
DC Offset
Baseband External Load
+40
60
mV
k
20
Resistive Load Impedance.
Differentially across pins.
Capacitive Load Impedance.
To ground.
5
pF
Output DC Voltage
IQ Amplitude Balance
IQ Phase Balance
V
CC
-1.3
V
CC
-1.6
+0.2
+2
V
CC
-1.9
+0.5
+5
V
dB
V
GC
=0.3V, P
IN
=-40dBm
V
GC
=0.3V, P
IN
=-40dBm
degree
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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