
10-42
RF2637
Rev A3 040511
Absolute Maximum Ratings
Parameter
Supply Voltage
Control Voltage
Input RF Power
Operating Ambient Temperature
Storage Temperature
Value
-0.5 to +7.0
-0.5 to +5.0
+10
-40 to +85
-40 to +150
Unit
V
DC
V
DC
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
T=25°C, 85MHz, V
CC
=3.0V, Z
S
=500
,
Z
L
=500
, 500
External Input Terminating
Resistor, 500
External Output Terminating
Resistor (Effective Z
S
=333
, Effective
Z
L
=250
) (See Application Example)
Frequency Range
Maximum Gain
Minimum Gain
Maximum Gain
Minimum Gain
Gain Slope
Gain Control Voltage Range
Gain Control Input Impedance
Noise Figure
Input IP
3
12 to 385
+51
-55
+45
-58
57
0 to 2.5
30
5
-40
-2
MHz
dB
dB
dB
dB
dB/V
V
DC
k
dB
dBm
dBm
+40
-65
+35
-68
+65
-40
+55
-48
V
GC
=2.5V, 85MHz
V
GC
=0.1V, 85MHz
V
GC
=2.5V, 385MHz
V
GC
=0.1V, 385MHz
Note 1
Source impedance of 4.7k
7.2
At maximum gain and 85MHz
At +40dB gain, referenced to 500
At minimum gain, referenced to 500
Spurious<-70dBm
-46
Stability (Max VSWR)
IF Input
Input Impedance
Power Supply
Voltage
Current Consumption
10:1
1
k
CDMA, differential
2.7 to 3.4
10
11.5
V
6
7
15
15
mA
mA
Minimum gain, V
CC
=3.0V
Maximum gain, V
CC
=3.0V
Thermal
Thermal Resistance
Maximum Junction Temperature
Note 1: Measured between a gain control voltage of 1.0V to 1.5V.
150
90
°C/W
°C
Theta J-Ref 85°C
Ref 85°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).