參數(shù)資料
型號(hào): RF2492
廠商: RF MICRO DEVICES INC
元件分類: 無繩電話/電話
英文描述: DUAL-BAND LOW NOISE AMPLIFIER/MIXER
中文描述: TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT
封裝: 5 X 5 MM, PLASTIC, LCC-32
文件頁數(shù): 6/22頁
文件大?。?/td> 483K
代理商: RF2492
Preliminary
8-38
RF2492
Rev A4 010828
8
F
Pin
1
Function
LO IN
Description
LO input for both bands. Impedance is approximately (120-j25)
.
Interface Schematic
1k
shunt resistor (static bleed).
AC coupled to transistor base
(internal DC block).
2
VCC2
Power supply connection for internal LO amplifiers. External low-induc-
tance bypass capacitor between 1nF and 47nF recommended.
Ground connection.
3
4
GND
IF1+
High-band IF output. Open collector. “Current combiner” IF interface to
1000
SAW filter recommended
High-band IF output. Open collector. “Current combiner” IF interface to
1000
SAW filter recommended
Pin requires external bypass capacitor between 1nF and 47nF.
2pF internal shunt capacitance.
5
IF1-
2pF internal shunt capacitance.
6
7
BYPASS
IF2-
Low-band IF output. Open collector. “Current combiner” IF interface to
1000
SAW filter recommended
Low-band IF output. Open collector. “Current combiner” IF interface to
1000
SAW filter recommended
Logic input. High selects IF1 mixer; low selects IF2 mixer.
2pF internal shunt capacitance.
8
IF2+
2pF internal shunt capacitance.
9
IF SEL
Diode to V
CC
and Ground.
CMOS logic interface.
Diode to V
CC
and Ground.
CMOS logic interface.
10
LNA IP SEL
Logic input. High selects external LNA current reference (pin 17); low
selects internal LNA current reference.
Low-band LNA input (base). Simple external matching required for best
performance.
11
CELL LNA
IN
LNA GAIN
SEL
VCC1
12
Logic input. High selects maximum LNA gain; low selects minimum
LNA gain.
Diode to V
CC
and Ground.
CMOS logic interface.
13
Power supply for internal references, logic, and mixer preamplifiers.
Internal RF bypass capacitor. External bypass capacitor between 1nF
and 47nF required.
Logic input. High selects maximum mixer gain (mixer RF amp on); low
selects minimum mixer gain (mixer RF amp off).
14
MIX GAIN
SEL
CELL LNA
OUT
GND
LNA ISET
Diode to V
CC
and Ground.
CMOS logic interface.
15
Low-band LNA output (collector). Simple external L-C matching
required.
16
17
Ground connection. See evaluation board layout.
External current reference for LNA. Resistor to ground sets LNA cur-
rent when Pin 10 is high. 20k
results in approximately 10mA LNA cur-
rent. Higher resistance results in lower current.
Low band mixer RF preamplifier input (base). External L-C network
required for best performance.
18
CELL MIX
IN
PCS LO
OUT+
PCS LO
OUT-
CELL LO
OUT+
CELL LO
OUT-
PCS MIX IN
19
High-band buffered LO output.
Internal DC blocking capacitor.
1k
shunt resistor (static bleed).
20
High-band buffered LO output.
Internal DC blocking capacitor.
1k
shunt resistor (static bleed).
21
Low-band buffered LO output.
Internal DC blocking capacitor.
1k
shunt resistor (static bleed).
22
Low-band buffered LO output.
Internal DC blocking capacitor.
1k
shunt resistor (static bleed).
23
High-band mixer RF preamplifier input (base). External L-C network
required for best performance.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane (low-inductance ground required for best perfor-
mance).
24
GND
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