
8-89
8
F
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe
GaAs MESFET
1
LNA VCC19
2
GND
5
LNA IN8
6
4
3
LNA IN19
7
GAIN SEL
14
T
13
M
12
M
11
G
10
G
9
L
L
8
15
VCC TX19
16
VCC DOUBLER
GND
17
IF A
18
20
GND
19
IF B
21
LO IN8
V
22
T
23
M
24
25
M
26
G
27
28
L
GND
GND
G
X2
RF2475
DUAL-BAND LOW NOISE AMPLIFIER/MIX ER
WIT H FR EQUENCY DOUBLER
TDMA Handsets
The RF2475 includes two downconverting mixers and
associated LNAs. It is designed for IS136 handset appli-
cations in the cellular 800MHz and PCS 1900MHz
bands. Each LNA has a gain bypass mode, which is con-
trolled by the gain select pin. The device internally ties the
two mixer outputs together, providing interface to a single
IF SAW filter. A frequency doubler is provided to supply
the LO signal to the PCS mixer and feeds the PCS trans-
mit LO output buffer. A cellular LO output buffer is also
included. The device is fabricated using Gallium Arsenide
HBT technology and is packaged in a 28-pin, 5mmx5mm
leadless package.
Complete Dual-Band Receiver Front-End
Stepped LNA Gain Control
Integrated LO Frequency Doubler
Integrated LO Output Buffers
Meets IS136 Specifications
RF2475
Dual-Band Low Noise Amplifier/Mixer with Fre-
quency Doubler
Fully Assembled Evaluation Board
RF2475 PCBA
8
Rev A2 010918
12°
MAX
1.00
0.85
0.80
0.65
0.65
0.30
4 PLCS
0.50
0.23
0.13
4 PLCS
5.00
sq.
2.50
Typ.
0.30
0.18
2
0.60
0.24
Typ
0.75
0.50
0.05
0.01
NOTES:
Shaded Pin is Lead 1.
1
Dimension applies to plated terminal: to be measured between 0.02 mm
and 0.25 mm from terminal end.
Pin 1 identifier must exist on top surface of package by identification
mark or feature on the package body. Exact shape and size is optional.
Package Warpage: 0.05 mm max.
4
Die Thickness Allowable: 0.305 mm max.
5
2
3
2.85
Package S tyle: LCC , 28-Pin, 5 x 5