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參數(shù)資料
| 型號： | RF2416PCBA |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | DUAL-BAND 2.7V LOW NOISE AMPLIFIER |
| 中文描述： | 雙頻為2.7V低噪聲放大器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 417K |
| 代理商： | RF2416PCBA |
Preliminary
4-200
RF2416
Rev A2 010810
4
G
A
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Storage Temperature
Rating
-0.5 to +6.0
+10
-40 to +150
Unit
V
DC
dBm
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Operating Range
Overall Frequency Range
800
1800
2.7
2.7
0
-40
1000
2000
3.0
3.0
3.0
+85
MHz
MHz
V
V
V
o
C
Low Band Operation
High Band Operation
VCC1 HB, VCC2 HB, VCC1 LB
HB BIAS, LB BIAS
HB SELECT, LB SELECT
Supply Voltage (V
CC
)
Power Down Voltage (V
BIAS
)
Logic Control Voltage Level
Operating Ambient Temperature
Input Impedance
Output Impedance
950MHz Performance -
High Gain Mode
2.8
2.8
50
50
T=25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=0V,
Z
IN
=Z
O
=50
Gain
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure
Reverse Isolation
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
14
15.5
17
+0.5
dB
dB
+0.5
dB
1.1
21
+5.0
-9
2.0
dB
dB
dBm
dB
15
+2.0
-12
2:1
2:1
6.0
4.8
mA
900MHz LNA ENABLED, 1900MHz LNA
DISABLED. I
CC
+ I
PD
T=25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=2.7V,
Z
IN
=Z
O
=50
950MHz Performance -
Bypass Mode
Gain
Gain Reduction
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
-8
-6
-3
dB
dBc
dBm
dB
21.5
15.0
+2
12.0
-1
2.5:1
2:1
See Application Notes
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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