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參數(shù)資料
| 型號： | RF2416 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | DUAL-BAND 2.7V LOW NOISE AMPLIFIER |
| 中文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, LCC, QFN-12 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 417K |
| 代理商： | RF2416 |
Preliminary
4-202
RF2416
Rev A2 010810
4
G
A
Pin
1
Function
HB IN
Description
DCS1800/PCS1900 RF input pin.
Interface Schematic
2
HB BIAS
HB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
3
LB BIAS
LB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
4
LB IN
GSM900 RF input pin.
5
LB GND
LNA emittance inductance. Total inductance is comprised of
package+bondwire+L2 on PCB.
6
LB OUT
GSM900 Amplifier Output pin. This pin is an open-collector output. It
must be biased to V
CC
through a choke or matching inductor. This pin
is typically matched to 50
with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
This pin selects high gain and bypass for GSM900.
Select < 0.8V, high gain.
Select > 1.8V, low gain.
7
LB SELECT
8
HB SELECT
This pin selects high gain and bypass for DCS1800/PCS1900.
Select < 0.8V, high gain.
Select > 1.8V, low gain.
9
HB OUT
DCS1800 Amplifier Output pin. This pin is an open-collector output. It
must be biased to V
CC
through a choke or matching inductor. This pin
is typically matched to 50
with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
HB IN
VCC1 HB
To Bias
Circuit
HB GND1
HB VREF/P
LB VREF/PD
LB OUT
LB GND
LB IN
To Bias
Circuit
LB SELECT
HB SELECT
HB OUT
HB GND2
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相關(guān)代理商/技術(shù)參數(shù) |
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| RF2416PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL-BAND 2.7V LOW NOISE AMPLIFIER |
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| RF2418_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:LOW CURRENT LNA/MIXER |
| RF2418PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:LOW CURRENT LNA/MIXER |
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