參數(shù)資料
型號(hào)： RF2373
廠商： RF MICRO DEVICES INC
元件分類： 衰減器
英文描述： 3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER
中文描述： 400 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： ROHS COMPLIANT, PLASTIC, SOT-5
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 132K
代理商： RF2373
Preliminary
4-2
RF2373
Rev A1 040921
Absolute Maximum Ratings
Parameter
Supply Voltage
Bias Voltage, V
BIAS
Input RF Level
Current Drain, I
CC
Operating Ambient Temperature
Storage Temperature
NOTE: Exceeding any one or a combination of the above maximum rating
limits may cause permanent damage. Input RF transients to +15dBm will
not harm the device. For sustained operation at inputs >+10dBm, a small
dropping resistor of 10
is recommended in series with the V
CC
.
Rating
-0.5 to +6.0
<V
CC
+15 (see note)
32
-40 to +85
-40 to +150
Unit
V
DC
V
DC
dBm
mA
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
25°C, V
CC
=3.3V, at typical frequencies
unless otherwise specified
Supply Voltage (V
CC
)
Bias Voltage (V
BIAS
)
RF Frequency Range
Power Down Current
Isolation
Current Drain
2.7
2.7
3.3
3.3
5.0
5.0
V
V
800 to 2500
MHz
μ
A
dB
mA
mA
dBm
10
V
BIAS
=0V
23
14
18
55
(LNA)
(Driver)
8
12
19
23
IP2
Cellular Low Noise
Amplifier
Frequency
Gain
Noise Figure
IIP3
IP1dB
Input VSWR
Output VSWR
GPS Low Noise Amplifier
Frequency
Gain
Noise Figure
IIP3
IP1dB
Input VSWR
Output VSWR
PCS Low Noise Amplifier
Frequency Range
Gain
Noise Figure
IIP3
IP1dB
Input VSWR
Output VSWR
820
19.5
880
21.5
1.1
-1
-11
2.0
4.0
960
23.5
1.3
MHz
dB
dB
dBm
dBm
I
CC
=10mA
-3
-13
2.5
4.5
1575
19.0
1.1
5
-5
1.7
1.6
MHz
dB
dB
dBm
dBm
17.0
21.0
1.3
I
CC
=10mA
3
-7
2.2
2.1
1850
16.0
1920
18.0
1.2
6
-5
1.8
1.6
1990
20.0
1.4
MHz
dB
dB
dBm
dBm
I
CC
=10mA
4
-7
2.3
2.1
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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