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參數(shù)資料
| 型號： | RF2304 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | GENERAL PURPOSE LOW-NOISE AMPLIFIER |
| 中文描述： | 300 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 197K |
| 代理商： | RF2304 |
4-59
RF2304
Rev A5 010717
4
G
A
Applic ation S chematic
Pin
1
Function
GND
Description
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Same as pin 1.
Interface Schematic
2
3
GND
RF IN
DC coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is approximately
200mV. If a DC path exists in the connected circuitry, an external DC-
blocking capacitor is required to properly maintain the DC operating
point.
Same as pin 1.
4
5
6
GND
GND
RF OUT
Same as pin 1.
RF output. A broadband impedance match is produced by internal
shunt resistive feedback. The DC connection to the power supply is
provided through an external chip inductor having greater than 150
reactance at the operating frequency. An external DC-blocking capaci-
tor is required if the following circuitry is not DC-blocked.
7
VDD2
Bias control connection. This pin is normally connected to the power
supply, but can be used to switch the amplifier on and off by switching
between power supply voltage and ground. This pin sinks approxi-
mately 600
μ
A when connected to V
DD
, and sources less than 10
μ
A
when grounded.
No connection.
8
NC
RF IN
RF OUT
V
DD
2
1
4
3
7
8
5
6
100 pF
RF IN
L1
RF Choke
100 pF
1 nF
V
DD
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相關(guān)代理商/技術(shù)參數(shù) |
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| RF2304_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GENERAL PURPOSE LOW-NOISE AMPLIFIER |
| RF2304_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GENERAL PURPOSE LOW-NOISE AMPLIFIER |
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| RF2304PB001 | 制造商:Hubbell Wiring Device-Kellems 功能描述:LINKOSITY, FEM RCPT, 20A SNIG 4P 1' |
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