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參數(shù)資料
| 型號： | RF2301PCBA |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | HIGH ISOLATION BUFFER AMPLIFIER |
| 中文描述： | 高隔離緩沖放大器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 198K |
| 代理商： | RF2301PCBA |
4-38
RF2301
Rev A8 010717
4
G
A
Absolute Maximum Ratings
Parameter
Supply Voltage (V
DD
)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.5
60
+10
-40 to +85
-40 to +150
Unit
V
DC
mA
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Nominal Frequency Range
Input IP
3
Noise Figure
Input VSWR
Output VSWR
Power Supply Voltage
T=25°C, V
DD
=5V
DC
300 to 2500
-8
MHz
dBm
dB
8
<2:1
<2:1
In a 50
system
In a 50
system
2.7 to 6.0
V
Nominal 5V Configuration
Using Broad Band Application Circuit,
V
DD
=5V
DC
, Freq=2500MHZ, T=25°C
Gain
P
1dB
Output Power
Supply Current
Reverse Isolation
21
24
+4
30
50
50
40
40
26
dB
dBm
mA
dB
dB
dB
dB
10
40
900MHz, without RF input
900MHz, with RF input, saturated
2500MHz, without RF input
2500MHz, with RF input, saturated
Using Broad Band Application Circuit,
V
DD
=3V
DC
, Freq=2500MHZ, T=25°C
Nominal 3V Configuration
Gain
P
1dB
Output Power
Supply Current
Reverse Isolation
15
17
0
14
50
50
40
40
dB
dBm
mA
dB
dB
dB
dB
900MHz, without RF input
900MHz, with RF input, saturated
2500MHz, without RF input
2500MHz, with RF input, saturated
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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