參數(shù)資料
型號(hào): RF2173PCBA
廠商: RF Micro Devices, Inc.
英文描述: 3V GSM POWER AMPLIFIER
中文描述: 3V的的GSM功率放大器
文件頁(yè)數(shù): 10/10頁(yè)
文件大?。?/td> 138K
代理商: RF2173PCBA
2-230
RF2173
Rev A4 010914
2
P
Typic al Test S etup
Power Supply
10dB/5W
3dB
RF Generator
Spectrum
Analyzer
Buffer
x1 OpAmp
Pulse
Generator
A buffer amplifier is recommended because the current into the
V
changes with voltage. As an alternative, the voltage may be
monitored with an oscilloscope.
V+
V-
S+
S-
Notes about testing the RF2173
The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effects that the
switching of the input impedance of the PA has on the signal generator. When V
APC
is switched quickly, the resulting
input impedance change can cause the signal generator to vary its output signal, either in output level or in frequency.
Instead of an attenuator an isolator may also be used. The attenuator at the output is to prevent damage to the spec-
trum analyzer, and should be able to handle the power.
It is important not to exceed the rated supply current and output power. When testing the device at higher than nominal
supply voltage, the V
APC
should be adjusted to avoid the output power exceeding +36dBm. During load-pull testing at
the output it is important to monitor the forward power through a directional coupler. The forward power should not
exceed +36dBm, and V
APC
needs to be adjusted accordingly. This simulates the behavior for the power control loop in
this respect. To avoid damage, it is recommended to set the power supply to limiting the current during the burst, not to
exceed the maximum current rating.
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