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參數(shù)資料
| 型號： | RF2137PCBA |
| 廠商： | RF Micro Devices, Inc. |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | LINEAR POWER AMPLIFIER |
| 中文描述： | 線性功率放大器 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 54K |
| 代理商： | RF2137PCBA |
2-117
RF2137
Rev B2 010720
2
P
Evaluation Board S chematic
(Download Bill of Materials from www.rfmd.com.)
Pin
1
Function
VCC
Description
Power supply for the driver stage, and interstage matching. Shunt
inductance is required on this pin, which can be achieved by an induc-
tor to V
CC
, with a decoupling capacitor on the V
CC
side. The value of
the inductor is frequency dependent; 3.3nH is required for 830MHz,
and 1.2nH for 950MHz. Instead of an inductor, a high impedance
microstrip line can be used.
RF input. This is a 50
input, but the actual input impedance depends
on the interstage matching network connected to pin 1. An external DC
blocking capacitor is required if this port is connected to a DC path to
ground or a DC voltage.
Ground connection. Keep traces physically short and connect immedi-
ately to the ground plane for best performance.
Power Control. When this pin is "low", all circuits are shut off. A "low" is
typically 0.5V or less at room temperature. During normal operation
this pin is the power control. Control range varies from about 2V for
0dBm to V
CC
for +31dBm RF output power. The maximum power that
can be achieved depends on the actual output matching. PC should
never exceed 6.0V or V
CC
, whichever is lowest.
Interface Schematic
2
RF IN
See pin 1.
3
GND
4
PC
5
RF OUT
RF Output and power supply for the output stage. The three output pins
are combined, and bias voltage for the final stage is provided through
these pins. The external path must be kept symmetric until combined to
ensure stability. An external matching network is required to provide the
optimum load impedance; see the application schematics for details.
6
7
8
RF OUT
RF OUT
RF OUT
GND
Same as pin 5.
See pin 5.
Same as pin 5.
See pin 5.
Same as pin 5.
See pin 5.
Pkg
Base
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
RF IN
VCC
From Bias
Stages
PC
To RF
Transistors
RF OUT
From Bias
Stages
1
2
3
4
8
7
6
5
BIAS
PACKAGE BASE
R1
10 k
C3
100 pF
C7
1 nF
50
μ
strip
RF IN
J1
L1
1.8 nH
VCC
L2
4.7 nH
C1
1.5 pF
C5
100 pF
C9
1 nF
C8
3.3
μ
F
L3
1.5 nH
C2
7.5 pF
C4
100 pF
50
μ
strip
RF OUT
J2
PC
C6
100 pF
2137400A
P1-1
P1-3
P1
VCC
GND
1
2
3
PC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF2138 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V GSM POWER AMPLIFIER |
| RF2138PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V GSM POWER AMPLIFIER |
| RF2139-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
| RF2140 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V DCS POWER AMPLIFIER |
| RF2140-000 | 功能描述:可復位保險絲 RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C |
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