參數(shù)資料
型號: RF2132
廠商: RF MICRO DEVICES INC
元件分類: 衰減器
英文描述: LINEAR POWER AMPLIFIER
中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: ROHS COMPLIANT, SOP-16
文件頁數(shù): 2/6頁
文件大小: 110K
代理商: RF2132
2-110
RF2132
Rev B9 010417
2
P
Absolute Maximum Ratings
Parameter
Supply Voltage (No RF)
Supply Voltage (P
OUT
<32dBm)
Power Control Voltage (V
PC
)
DC Supply Current
Input RF Power
Output Load VSWR
Storage Temperature
Junction Temperature
Rating
-0.5 to +8.0
-0.5 to +5.0
-0.5 to +5.0 or V
CC
800
+12
10:1
-40 to +150
200
Unit
V
DC
V
DC
V
mA
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
T=25°C, V
CC
=4.8V, V
PC
=4.0V,
Freq=824MHz to 849MHz
Usable Frequency Range
Linear Gain
Total Linear Efficiency
Efficiency at Max Output
OFF Isolation
Second Harmonic
Maximum Linear Output Power
Adjacent Channel Power Rejec-
tion @ 885 kHz
800
27
40
50
23
824 to 849
29
45
55
27
-30
28.5
-46
950
31
MHz
dB
%
%
dB
dBc
V
PC
=0V,P
IN
=+6dBm
Including Second Harmonic Trap
IS-95A CDMA Modulation
Pout = 28 dBm
ACPR can be improved by trading off effi-
ciency.
Pout = 28 dBm
29
-44
dBc
Adjacent Channel Power Rejec-
tion @ 1.98 MHz
Maximum CW Output Power
Operating Case Temperature
Ambient Operating Temperature
Junction to Case Thermal Resis-
tance
Input VSWR
Output Load VSWR
Power Down
Turn On/Off Time
Total Current
V
PC
“OFF” Voltage
V
PC
“ON” Voltage
Power Supply
Power Supply Voltage
Idle Current
Current into VPC pin
-58
-56
dBc
31.5
-30
-30
32
dBm
°C
°C
°C/W
110
100
Pout = 31 dBm, Efficiency = 55%
85
<2:1
10:1
No oscillations
100
10
0.5
Vcc
ns
μ
A
V
V
“OFF” State
0.2
3.6
4.0
4.2
4.8
40
15
5.0
100
20
V
Operating voltage
V
PC
=4.0V
“ON” State
mA
mA
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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