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參數(shù)資料
| 型號(hào)： | RF2125 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | HIGH POWER LINEAR AMPLIFIER |
| 中文描述： | 1500 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOP-8 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | RF2125 |
2-65
RF2125
Rev A7 010112
2
P
SeeUpgradedProductRF2125P
The data below is valid only under small-signal conditions. The device needs to be biased in Class A, with the out-
put power below the 1-dB compression point. For large signal operation this data may be used as a starting point,
but further tuning to optimize performance will be required.
Voltage and idle current have only very limited effect on the input and output impedances, hence only one plot is
shown, valid for V
CC
=5 to 7V, and I
CC
=50 to 250mA.
1.2
1.4
1.6
1.8
2.2
2.4
2.6
Frequency (GHz)
RF2125 Gain
0
2
4
6
8
10
12
14
16
18
20
22
24
26
G
DB(|S[2,1]|)
Vcc=6.5V, Icc=200mA
DB(GMax)
Vcc=6.5V, Icc=200mA
DB(|S[2,1]|)
Vcc=5.0V, Icc=50mA
DB(GMax)
Vcc=5.0V, Icc=50mA
1.5
2
2.5
FREQUENCY (GHz)
RF2125 S12
-37
-36
-35
-34
-33
DB(|S[1,2]|)
0
-
10.0
5.0
-
-
20
-
3
30
-
4
4.0
0
0
-0.2
0
0
-04
0
0
-.
0
0
-
RF2125 Input / Output Impedance, Class A bias
Swp Max
2.5GHz
Swp Min
1GHz
S11
S22
1 GHz
1 GHz
2.5 GHz
2.5 GHz
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| RF2125PCBA | HIGH POWER LINEAR AMPLIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF2125P | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
| RF2125PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
| RF2125PPCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
| RF2126 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
| RF2126_07 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH POWER LINEAR AMPLIFIER |
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