
2-34
RF2114
Rev A5 001222
2
P
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Down Voltage (V
PD
)
DC Supply Current
Input RF Power
Output Load VSWR
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +8.5
-0.5 to +5.0
500
+12
20:1
-40 to +85
-40 to +150
Unit
V
DC
V
mA
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
T=25°C, V
CC
=5.8V, V
PD
=4.0V,
Z
LOAD
=18
, P
IN
=6dBm, Freq=150MHz
Frequency Range
Saturated Output Power
Output Power
Power Gain
CW Total Efficiency
Two Tone Total Efficiency
IM
3
IM
5
Second Harmonic
Third Harmonic
Output Noise Power
Input VSWR
1 to 600
+29
>+27
36
45
26
-40
-43
-24
-30
<-125
<3:1
MHz
dBm
dBm
dB
%
%
dBc
dBc
dBc
dBc
dBm/Hz
+28
+31
Frequency>450MHz
30
40
P
OUT
= +19dBm/tone
P
OUT
= +19dBm/tone
P
OUT
= +19dBm/tone
Without external second harmonic trap
-50
-70
-25
-30
With external matching network; see appli-
cation schematic
With external matching network; see appli-
cation schematic
Load impedance for optimal match
Input Impedance
50
Load Impedance
Power Down Control
Power Down “ON”
Power Down “OFF”
Power Supply
Power Supply Voltage
Power Supply Idle Current
Supply Current
V
PD
Current
Total "OFF" Current Drain
Turn-on Time
18+j0
V
CC
V
V
Voltage supplied to the input; Part is “ON”
Voltage supplied to the input; Part is “OFF”
0
0.2
2.7 to 6.5
45
300
<3.5
V
90
500
mA
mA
mA
μ
A
ns
150
Total of pins 5 and 6
Into pin 4
V
PD
<0.1V
DC
V
PD
=0 to V
PD
=+4V
DC
10
<100
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).