參數(shù)資料
型號(hào): RF2114
廠商: RF MICRO DEVICES INC
元件分類: 衰減器
英文描述: TRI R RECP F FLG SEAL 0-4
中文描述: 1 MHz - 600 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: SOIC-14
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 73K
代理商: RF2114
2-35
RF2114
Rev A5 001222
2
P
Pin
1
Function
RF1 IN
Description
RF input pin. This pin is internally connected to the bias circuits. An
external DC blocking capacitor is required. The value of this capacitor
depends on the actual operating frequency.
Ground connection. Keep the connection to the backside ground plane
as short as possible, by placing the vias close to the pin.
Same as pin 2.
Interface Schematic
2
GND
3
4
GND
PD
Power down control voltage. When this pin is at 0V, the device will be in
power down mode, dissipating minimum DC power. When this pin is at
V
CC
(but not higher than 5.0V max), the device will be in full power
mode delivering maximum gain and output power capability. This pin
may also be used to perform some degree of gain control or power con-
trol when set to voltages between 0V and V
CC
or 5.0V, whichever is the
lowest. It is not optimized for this function so the transfer function is not
linear over a wide range as with other devices specifically designed for
analog gain control. However, it may be usable for coarse adjustment or
in some closed loop AGC systems. This pin should not, in any circum-
stance, be higher in voltage than V
CC
. This pin should also have an
external bypassing capacitor.
RF input of the power stage. This pin is internally connected to the bias
circuits. An external DC blocking capacitor is required. This same
capacitor can also be used for interstage matching. Typically this
capacitor is between RF2 IN (pin 5) and RF1 OUT (pin 6); see the
application schematics for details.
RF output of the pre-amplifier. Power supply needs to be supplied to
this pin through an inductor to V
CC
. Together with the series capacitor
between pin 5 and 6 the interstage matching circuit is formed. See the
application schematics for values for different frequencies.
Positive supply for the active bias circuits. This needs to be bypassed
with a single capacitor, placed as close as possible to the package.
Additional bypassing of 1
μ
F is also recommended, but proximity to the
package is not as critical.
Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor. Pins 8, 9, 13, and 14 are connected internally. Bias
for the final power amplifier output transistor must also be provided
through one of these two pins. Typically, pins 8 and 9 are connected to
a network that provides the DC bias and also creates a second har-
monic trap. A capacitor series resonates with internal bond wires and
some additional series inductance, and acts as a trap at two times the
operating frequency, effectively shorting out the second harmonic.
Shorting out this harmonic serves to increase the amplifier’s maximum
output power and efficiency, as well as to lower the level of the second
harmonic output. Typically, pins 13 and 14 are externally connected
very close to the package and used as the RF output with a matching
network that presents the optimum load impedance to the PA for maxi-
mum power and efficiency, as well as providing DC blocking at the out-
put.
Same as pin 8.
5
RF2 IN
6
RF1 OUT
7
VCC1
8
RF2 OUT
9
RF2 OUT
GND
GND
GND
RF2 OUT
RF2 OUT
10
11
12
13
14
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 8.
Same as pin 8.
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