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參數(shù)資料
| 型號： | RF1S70N03 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Monitor Shelf; External Height:15.72"; External Width:18.87"; External Depth:27.02"; Body Material:Steel; Color:Black; Leaded Process Compatible:No; Panel Width:19"; Peak Reflow Compatible (260 C):No; Enclosure Color:Black RoHS Compliant: No |
| 中文描述： | 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 588K |
| 代理商： | RF1S70N03 |
3-48
RFP70N03, RF1S70N03, RF1S70N03SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
r
D
,
PULSE DURATION = 250
μ
s, V
GS
= 10V, I
D
= 70A
2.0
1.6
1.2
0.8
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
V
G
,
0.4
V
GS
= V
DS
, I
D
= 250
μ
A
G
I
D
= 250
μ
A
2.0
1.6
1.2
0.4
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
B
D
,
0.8
B
0
0
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
15
20
25
1000
2000
3000
5000
6000
7000
4000
C
V
GS
= 0V, FREQUENCY (f) = 1MHz
CISS
COSS
CRSS
10
-5
Z
θ
J
,
t, RECTANGULAR PULSE DURATION (s)
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
10
-2
10
-1
10
0
10
1
NOTES:
1. DUTY FACTOR, D = t
1
/t
2. PEAK T
J
= P
DM
x (Z
θ
JC
) +T
C
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
0.5
P
DM
t
1
t
2
30.0
22.5
15.0
7.5
0.0
10.0
7.5
5.0
2.5
0.0
t, TIME (
μ
s)
20
IG
)
)
ACT
----------------------
80
IG
)
)
ACT
----------------------
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
R
L
= 0.43
I
G(REF)
= 3.0mA
V
GS
= 10V
相關PDF資料 |
PDF描述 |
|---|---|
| RF1S70N03SM | 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| RF1S70N06 | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs |
| RF1S70N06SM | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs |
| RF1S9530SM | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs |
| RF1S9540SM | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S70N03SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RF1S70N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S70N06SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9A | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9AR4570 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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