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參數(shù)資料
| 型號(hào)： | RF1S60P03SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 104K |
| 代理商： | RF1S60P03SM |
4-52
Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified.
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
-30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V,
V
GS
= 0V
T
C
= +25
o
C
-
-
-1
μ
A
T
C
= +150
o
C
-
-
-50
μ
A
Gate-Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 60A, V
GS
= -10V
-
-
0.027
Turn-On Time
t
ON
V
DD
= -15V, I
D
= 60A
R
L
= 0.25
, V
GS
= -10V
R
GS
= 2.5
-
-
140
ns
Turn-On Delay Time
t
D(ON)
-
20
-
ns
Rise Time
t
R
-
75
-
ns
Turn-Off Delay Time
t
D(OFF)
-
35
-
ns
Fall Time
t
F
-
40
-
ns
Turn-Off Time
t
OFF
-
-
115
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to -20V
V
DD
= -24V,
I
D
= 60A,
R
L
= 0.4
-
190
230
nC
Gate Charge at 10V
Q
G(-10)
V
GS
= 0 to -10V
-
100
120
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0 to -2V
-
7.5
9
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
3000
-
pF
Output Capacitance
C
OSS
-
1500
-
pF
Reverse Transfer Capacitance
C
RSS
-
525
-
pF
Thermal Resistance, Junction to Case
R
θ
JC
-
-
0.85
o
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
-
-
80
o
C/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= -60A
-
-
-1.75
V
Reverse Recovery Time
t
RR
I
SD
= -60A, dI
SD
/dt = -100A/
μ
s
-
-
200
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
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| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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