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參數(shù)資料
| 型號(hào)： | RF1S60P03 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | RF1S60P03 |
4-53
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
-500
-100
-10
-1
-1
-10
-60
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
μ
s
10ms
100ms
DC
V
DSS
MAX = -30V
I
D
,
10
1
0.1
0.01
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
10
1
Z
θ
J
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
T
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-60
-70
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
2
-10
3
t, PULSE WIDTH (ms)
T
C
= +25
o
C
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
-50
0
0.0
-1.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
I
D
,
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-30
-60
-90
-120
V
GS
= -4.5V
V
GS
= -20V
0.0
-2.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
-4.0
-6.0
-8.0
-10.0
I
D
,
0
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= -15V
+175
o
C
+25
o
C
-30
-60
-120
-90
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S60P03SM | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RFG60P05E | 60A, 50V, 0.030 Ohm,P-Channel PowerMOSFET(60A, 50V, 0.030 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RFG60P05E | 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET |
| RFG60P06E | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| RFG60P06E | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S60P03SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| RF1S630 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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