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參數(shù)資料
| 型號： | RF1S45N03LSM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 100K |
| 代理商： | RF1S45N03LSM |
7-4
NOTE: Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
50
75
I
D
,
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
μ
s, T
C
= 25
o
C
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
25
50
75
175
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
100
-55
o
C
25
o
C
V
DD
= 15V
0
25
50
75
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
)
5.0
100
I
D
= 2A
I
D
= 30A
I
D
= 15A
I
D
= 45A
2.5
PULSE DURATION = 250
μ
s
0
150
200
250
300
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
350
100
50
t
r
t
f
t
d(OFF)
t
d(ON)
V
DD
= 15V, I
D
= 45A, R
L
= 0.333
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
PULSE DURATION = 250
μ
s, V
GS
= 5V, I
D
= 45A
RFP45N03L, RF1S45N03L, RF1S45N03LSM
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